|
Discretes 650V
|
|
R(on) (mΩ) (max)
|
TO-220 (Drain Tab)
|
TO-220 (Source Tab)
|
TO-247 (Source Tab)
|
PQFN88 (Drain Tab)
|
PQFN88 (Source Tab)
|
|
130
|
|
TPspan208PS
|
|
TPspan208LD
|
TPspan208LS
|
|
|
|
|
TPspan208LDG*
|
|
|
85
|
|
TPspan212PS
|
|
|
|
|
41
|
|
|
TPspan207WS
|
Transphorm氮化镓功率MOS管是基于氮化镓GaN-HEFT的高频MOS管，设计原理与碳化硅MOS一样；氮化镓MOS具有快速开关特性，高频转换特性，提高功率转换效能。
TPspan002LD PQFN88 600 9 0.29 GaN HEMT,常断, 漏极标签
TPspan002LS PQFN88 600 9 0.29 GaN HEMT, 常断, 源极标签
TPspan002PD TO-220 600 9 0.29 GaN HEMT, 常断, 漏极标签
TPspan002PS TO-220 600 9 0.29 GaN HEMT, 常断, 源极标签
TPspan006LD PQFN88 600 17 0.15 GaN HEMT, 常断, 漏极标签
TPspan006LS PQFN88 600 17 0.15 GaN HEMT, 常断, 源极标签
TPspan006PD TO-220 600 17 0.15 GaN HEMT, 常断, 漏极标签
TPspan006PS TO-220 600 17 0.15 GaN HEMT, 常断, 源极标签
TPspan202LD PQFN88 600 9 0.29 GaN HEMT, 常断, 漏极标签
TPspan202LS PQFN88 600 9 0.29 GaN HEMT, 常断, 源极标签
TPspan202PD TO-220 600 9 0.29 GaN HEMT, 常断, 漏极标签
TPspan202PS TO-220 600 9 0.29 GaN HEMT, 常断, 源极标签
TPspan205WS TO-247 600 34 0.063 GaN HEMT, 常断, 源极标签
TPspan206LD PQFN88 600 17 0.15 GaN HEMT, 常断, 漏极标签
TPspan206LS PQFN88 600 17 0.15 GaN HEMT, 常断, 源极标签
TPspan206PD TO-220 600 17 0.13 GaN HEMT, 常断, 漏极标签
TPspan208PS TO-220 650 17 0.13 GaN HEMT, 常断, 源极标签
TPspan208PD PQFN88 650 17 0.13 GaN HEMT, 常断, 漏极标签
TPspan208LS PQFN88 650 17 0.13 GaN HEMT, 常断, 源极标签
TPspan208LDG PQFN88 650 17 0.13 GaN HEMT, 常断, 漏极标签
TPspan212PS TO-220 650 17 0.13 GaN HEMT, 常断, 源极标签
TPspan207WS TO-247 650 17 0.13 GaN HEMT, 常断, 漏极标签